features 1 of 4 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt not f o r new d es i gn s - rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rf mems D10040200P1 45-1000mhz gaas power doubler hybrid the D10040200P1 is a hybrid power doubler amplifier module. the part employs gaas die, has high output capability, and is operated from 45mhz to 1000mhz. it provides excellent linearity and superior return loss performance with low noise and optimal reliability. output input +vb ? excellent linearity ? superior return loss perfor- mance ? extremely low distortion ? optimal reliability ? low noise ? unconditionally stable under all terminations ? extremely high output capa- bility ? 20.0db min. gain at 1ghz ? 450ma max. at 24vdc applications ? 45mhz to 1000mhz catv amplifier systems document revision level b not for new designsnot for new design- ? ? package: sot-115j d10040200p 145- 1000 mhz gaas power doubler hybrid parameter specification unit condition min. typ. max. overall v b = 24v; t mb =30c; z s =z l =75 ? power gain 18.5 19.0 19.5 db f=45mhz 20.0 20.5 21.5 db f=1000mhz slope [1] 1.0 1.5 2.5 db f=45mhz to 1000mhz flatness of frequency response 0.5 db f=45mhz to 1000mhz input return loss 20.0 db f=45mhz to 160mhz 18.0 f=160mhz to 870mhz 14.0 db f=870mhz to 1000mhz output return loss 20.0 db f=45mhz to 160mhz 18.0 f=160mhz to 870mhz 14.0 db f=870mhz to 1000mhz noise figure 3.5 4.5 db f=50mhz to 1000mhz total current consumption (dc) 430.0 450.0 ma 1. the slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2 of 4 document revision level b 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . not f o r new d es i gn s - D10040200P1 absolute maximum ratings parameter rating unit rf input voltage (single tone) 75 dbmv dc supply over-voltage (5 minutes) 30 v storage temperature -40 to +100 c operating mounting base tempera- ture -30 to +100 c parameter specification unit condition min. typ. max. distortion data 40mhz to 550mhz v b = 24v; t mb =30c; z s =z l =75 ? ctb -66 -64 dbc 79 ch 7db tilted; v o =52dbmvat 550mhz [2] xmod -57 -55 dbc 79 ch 7db tilted; v o =52dbmvat 550mhz [2] cso -67 -65 dbc 79 ch 7db tilted; v o =52dbmvat 550mhz [2] 2. 79 channels, ntsc frequency raster: 55.25mhz to 547.25mhz, +45dbmv to +52dbmv tilted output level. composite second order (cso) - the cso parameter (both sum and difference products) is defined by the ncta. composite triple beat (ctb) - the ctb parameter is defined by the ncta. cross modulation (xmod) - cross modulation (xmod) is measured at baseband (selective voltmeter method), referenced to 100% modu lation of the car- rier being tested. caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro device s, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 4 not f o r new d es i gn s - document revision level b 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . D10040200P1
4 of 4 document revision level b 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . not f o r new d es i gn s - D10040200P1
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